Synthesis of silicon nanocrystal memories by sputter deposition

Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows:

• Review of relevant literature.
• Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide.
• Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer).
• Characterization of deposited films.
• Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC.
• Establishment of annealing conditions compatible with the requirements of current CMOS technology based on experimental results and simulations of Si NC formation.
• Preparation Si NC memory capacitors using the developed processes.
• Characterization of these devices by suitable techniques. Demonstration of their memory functionality.