Ion Beam Assisted Deposition of a tungsten Compound Layer on 6H-Silicon Carbide

Ion beam assisted deposition (IBAD) as a means of synthesizing
a tungsten carbide layer on top of SiC is investigated by Rutherford Backscattering
(RBS), X-ray diffraction (XRD) and four point probe measurements. Evaporation
of tungsten and subsequent implantation of carbon leads to a crystalline
layer of tungsten carbide whose resistivity is 1554 mWcm. At an implantation
dose of 5x1017C+cm-2 enhanced surface erosion occurs. Simultaneous evaporation
of tungsten and implantation of carbon procedures a layer of crystalline
W2C mixed with tungsten. The resistivity of this layer is 400 mWcm, i.e.
only a factor of 5 higher than that of single crystal W2C.