From short-wavelength quantum cascade lasers to impulsive THz emitters

I will discuss two recent advances related to semiconductor light sources in the infrared and THz regions. One example is a quantum cascade laser operating at a wavelength shorter than 4 microns above room temperature with high peak power. It is based on strained InGaAs/InAlAs on InP, with the addition of high barriers of pure AlAs for better confinement and strain compensation. In a novel few-cycle THz emitter we try to combine the advantages of the high electric bias field in photoconductive antennas with a large active area. This is achieved with an interdigitated electrode structure, partially covered in order to mask one field polarity. As a result no destructive interference of the emitted THz wave occurs, which allows upscaling of the device area.