Anomalous behaviors of E-1/E-2 deep level defects in 6H silicon carbide

Deep level defects E1/E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H-SiC. Similar to others' results, the behaviors of E-1 and E-2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E-1/E-2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E-1/E-2. The activation energy and the capture cross section of this defect are E-C-0.31 eV and sigma similar to 8 x 10(-11) cm(2), respectively.