Ion implantation in silicon: limits of the +1 model

High energy, high dose Ge ion implantation in silicon results after rapid thermal annealing in a defect structure which shows a stacked structure consisting of sequential layers of vacancy-type defects (cavities) and interstital-type defects (dislocation loops). This structure is in contrast to the predictions of the so called +1 model. The conditions for the formation of such defects and the limits of the +1 model are discussed.