Homogenisation of the melting depth in FLASiC structures
Homogenisation of the melting depth in FLASiC structures
Voelskow, M.
It could be shown that both, the introduction of a melt stop layer in any depth behind the Si / SiC interface and the installation of a surface layer, decreasing the silicon melting temperature, are usefull methods to homogenize the melting depth in the bulk silicon.
Keywords: flash lamp; pulse annealing; silicon carbide
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Contribution to proceedings
HeT-SiC-05, 26.04.-01.05.2005, Krippen, BRD
FZR-433, Dresden: Forschungszentrum Rossendorf, 27-30
Permalink: https://www.hzdr.de/publications/Publ-7398