Homogenisation of the melting depth in FLASiC material
Homogenisation of the melting depth in FLASiC material
Voelskow, M.
It could be shown that both, the introduction of a melt stop layer in any depth behind the Si / SiC interface and the installation of a surface layer, decreasing the silicon melting temperature, are usefull methods to homogenize the melting depth in the bulk silicon.
Keywords: flash lamp; pulse annealing; silicon carbide
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Lecture (others)
FLASiC Meeting, 15.-16.10.2004, Ilmenau, BRD
Permalink: https://www.hzdr.de/publications/Publ-7399