Efficient electroluminescence from rare-earth implanted SiO2 metal-oxide-semiconductor structures

Sun, J. M.; Skorupa, W.; Dekorsy, T.; Helm, M.

Efficient electroluminescence from rare-earth implanted SiO2 metal-oxide-semiconductor structures

Sun, J. M.; Skorupa, W.; Dekorsy, T.; Helm, M.

The IR, green, and UV electroluminescence from rare-earth (Er, Tb, and Gd) implanted SiO2 MOS devices is studied, exhibiting quantum efficiencies comparable to III-V light emitting diodes.

Keywords: Electroluminescence rare earth; ion implantation; silicon dioxide

Lecture (others)
2005 2nd International Conference on Group IV Photonics, 21.9.2005, Antwerp, Belgium

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