Homogenisation of the melting depth in SiC on Si structures during flash lamp irradiation

Flash lamp annealing of heteroepitaxial silicon carbide on silicon structures involves melting the silicon below the SiC layer but the facetted nature of the liquid-solid interface leads to unacceptable surface roughness. This paper describes a method of controlling melting by using a melt stop created at a controlled depth below the Si / SiC interface by implanting a high dose of carbon, which significantly increases the silicon melting temperature. Results confirm the effectiveness of the technique in reducing roughness.