Traditional Hot-Electron MOS Devices for Novel Optoelectronic Applications

We report the realization of highly-efficient light emitting MOS devices which are based on hot-electron excitation of rare-earth ions implanted into SiO2. The implantation of Gd+ and Tb+ ions yields emission wavelengths of 316 nm and 541 nm with external quantum efficiencies up to 1% and 16%, respectively. The observed threshold electric fields for observing electroluminescence is in accordance with the injection of hot electrons via Fowler-Nordheim tunneling into SiO2 at field strengths in the range of 8-9 MV/cm. The presence of different electroluminescence bands of the Tb-implanted devices allows us to study details of the hot-electron excitation process.