X-ray investigation of focused ion-beam induced semiconductor surfaces - How to make a lateral nanostructure

X-ray investigation of focused ion-beam induced semiconductor surfaces - How to make a lateral nanostructure

Grenzer, J.; Bischoff, L.; Pietsch, U.

We report on the strain and defect analysis of lateral nanostructures created in Ga and Si substrates which was performed utilizing the method of X-ray grazing-incidence diffraction. The substrates were patterned by focused ion beam implantation technique using a Ga or AuGeSi liquid metal ion source.

Keywords: ion beam implantation; grazing incidence diffrtaction

  • Lecture (Conference)
    348. WE-Heraeus-Seminar, Ions at Surfaces: Patterns and Processes, 19.-23.06.2005, Bad Honnef, Germany

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