Direct evidence of self-aligned Si nanocrystals formed by ion irradiation of Si/SiO2 interfaces

Energy-filtered transmission electron microscopy proves di-rectly, that ion irradiation and post-irradiation annealing of a Si/SiO2 interface results in the formation of a narrow layer of monodisperse Si nanocrystals in the oxide at a tunnel distance from the interface. Position and size of the Si nanocrystals are in agreement with predictive atomistic computer simulations.