Structure, energetics and migration of V and I in Ge: an atomistic study
Structure, energetics and migration of V and I in Ge: an atomistic study
Geßner, H.; Posselt, M.
For details of this talk, please contact the authors.
Keywords: defects; Ge; computer simulations
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Lecture (Conference)
2nd CADRES Germanium Workshop, 01.12.2005, Brussels, Belgium
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