Structure, energetics and migration of V and I in Ge: an atomistic study


Structure, energetics and migration of V and I in Ge: an atomistic study

Geßner, H.; Posselt, M.

For details of this talk, please contact the authors.

Keywords: defects; Ge; computer simulations

  • Lecture (Conference)
    2nd CADRES Germanium Workshop, 01.12.2005, Brussels, Belgium

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