InAsSb/GaAs hetero-epitaxial crystals studied by cyclotron resonance measurements
InAsSb/GaAs hetero-epitaxial crystals studied by cyclotron resonance measurements
Drachenko, O.; Bansal, B.; Rylkov, V. V.; Galibert, J.; Dixit, V. K.; Leotin, J.
In this paper we present a compact terahertz cyclotron resonance (CR) spectrometer based on a GaAs/AlGaAs quantum cascade laser. We demonstrate high reproducibility as well as high precision in order of ~1% in the position of CR absorption and ~10% in amplitude. The spectrometer is, finally, used for measurements of InAsxSb1-x alloys with As concentration ranged between 0 and 6%.
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Lecture (Conference)
12-th International Conference on Narrow Gap Semiconductors, 03.-07.07.2005, Toulouse, France -
Contribution to proceedings
12-th International Conference on Narrow Gap Semiconductors, 03.-07.07.2005, Toulouse, France
Proceedings of the 12th International Conference on Narrow Gap Semiconductors, Part II, 143-148
Permalink: https://www.hzdr.de/publications/Publ-8168
