Excess vacancies in SiGe
Excess vacancies in SiGe
Kögler, R.
Experimental results on ion implantation into SiGe show a very high content of residual vacancy defects after annealing. On the other hand theory predicts a decreasing excess vacancy production in SiGe with increasing Ge content. The contribution adresses this problem.
Keywords: ion implantation; defects; SiGe; Si
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Lecture (Conference)
Germanium Workshop, 01.-02.12.2005, Brüssel, Belgien
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