Defect engineering for ion beam synthesis of SOI structures

The simultaneous dual ipn implantation was recently shown to be an effective method to achieve better results from ion beam synthesis of SiC. The "in situ" generation of vacancies during implantation accomodates volume expansion due to phase formation and in this way increases the amount of synthesized material.
In this study different methods of introduction of vacancies are compared for the ion beam synthesis of a buried layer of SiO2 in Si (SOI structure).