Praseodymium compound formation in silicon by ion beam synthesis

The compound formation in the ternary system Pr-Si-O initiated by ion beam synthesis inside bulk-Si material was studied by transmission electron microscopy and x-ray diffraction. The oxygen content was varied by additional O ion implantation and by oxidation or implantation into SiO2. For annealing temperatures of 1100°C Pr silicate grains were observed consisting of Pr9.33Si6O26 or Pr2Si2O7. Pr silicide was found in minor fraction also in samples with enhanced oxygen content and for lower annealing temperatures such as 900°C. Pr oxide, the promising high-k material, was not definitely verified. The obtained results can be explained by the simple consideration that the energy should be minimized related with reordering inside the Si material during compound formation.