The investigation of the chemical composition profile and the lateral homogeneity of AIIIBV quantum wells

The chemical composition and interplanar spacing profiles as well the lateral homogeneity of AIIIBV heterostructures containing a highly strained In(x)Ga(1-x)As layer were investigated. The heterostructures grown by metallorganic chemical vapor deposition were chracterized by means of high resolution x-ray diffractometry, x-ray reflectometry and Rutherford backscattering. In order to analyze the experimental results an algorithm for calculating the x-ray profiles based on the Darwin diffraction theory has been worked out. The developed method was applied to find out: the dependence of the growth rate and the interface profiles of the highly strained In(x)Ga(1-x)As layer on the deposition time to supervise the growth process of a resonant cavity enhanced photodiode heterostructure for which a highly strained In(x)Ga(1-x)As layer is an essential part.