Dose rate and temperature dependence of ion-beam-induced defect evolution in germanium

To investigate the effect of dose rate and irradiation temperature on defect evolution in germanium during the ion implantation process a focused ion beam system is used. Channeling implantation of Ga is performed at two very different dose rates (3.5x1011 and 1.6x1019 cm-2s-1), at two temperatures (RT and 250 0C), and at five different doses, ranging from 5x1012 to 5x1014 cm-2. The depth distributions of Ga and of the implantation damage are determined by SIMS and micro-RBS/C, respectively. The shape of the measured range and damage profiles is strongly influenced by the dose rate and the implantation temperature. These results are explained by the competition between damage buildup and dynamic annealing during the ion bombardment. For the two implantation temperatures considered, the time scale for intracascade defect relaxation can be estimated. The measured Ga depth profiles can be reproduced by atomistic computer simulations using a phenomenological model to describe the probability that an implanted ion collides with a target atom of a damaged region in dependence on the total nuclear energy deposition per target atom.