Laser Interference Lithography Tailored for Highly symmetric arranged ZnO nanowire arrays
Laser Interference Lithography Tailored for Highly symmetric arranged ZnO nanowire arrays
Kim, D. S.; Ji, R.; Fan, H. J.; Bertram, F.; Scholz, R.; Dadgar, A.; Nielsch, K.; Krost, A.; Christen, J.; Gösele, U.; Zacharias, M.
Highly symmetric arranged ZnO nanowire arrays are produced by laser interference lithography and chemical vapor transport process. The resulting ZnO nanowires show a narrow diameter distribution as well as a uniform spacing. Liquid-phase assistant vapor-solid mechanism is proposed for one-to-one synthesized ZnO nanowires growth. Scanning cathodoluminescence microscopy is used to characterize the optical properties.
Keywords: Arrays; Chemical vapor transport; Lithography; Nanowires; Semiconductors
- Small (2007)
Permalink: https://www.hzdr.de/publications/Publ-8569
