Excess vacancy generation in SiGe
Excess vacancy generation in SiGe
Kögler, R.
The excess vacancy generation in SiGe by ion implantation was investigated. In contrast to theory the excess vacancy generation in SiGe was observed to be higher than in Si. The reason is the incomplete vacancy-interstitial recombination of defects in SiGe.
Keywords: Ion implantation; implantation defects; excess defects; vacancies; Si; SiGe
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Lecture (Conference)
Europien Materials Research Society Conference 2006 - E-MRS2006 -, 29.05.-02.06.2006, Nizza, France
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