Fabrication of MSM detector structures on silicon by focused ion beam implantation

We report the fabrication of metal-semiconductor-metal
(MSM) photo detectors on silicon substrates with CoSi2 electrodes. The
electrode patterns have been formed by ion beam synthesis applying maskless
implantation with a cobalt focused ion beam. Implantation has been carried
out with the substrate at room temperature and at 400 °C.