Recent results of slow positron implantation spectroscopy to characterize vacancy-type damage in ion-implanted 6H-SiC

Recent results of slow positron implantation spectroscopy to characterize vacancy-type damage in ion-implanted 6H-SiC

Brauer, G.

• Lecture (Conference)
  Seminar an der University of Hong Kong, Physics Department, 13.01.2006, Hong Kong, China
• Lecture (Conference)
  Seminar an der Chinese University of Hong Kong, Department of Electronic Engineering, 17.01.2006, Hong Kong, China

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