Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

Brauer, G.; Anwand, W.; Skorupa, W.; Kuriplach, J.; Melikhova, O.; Cizek, J.; Prochazka, I.; Wenckstern, H. von; Brandt, M.; Lorenz, M.; Grundmann, M.

Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

Brauer, G.; Anwand, W.; Skorupa, W.; Kuriplach, J.; Melikhova, O.; Cizek, J.; Prochazka, I.; von Wenckstern, H.; Brandt, M.; Lorenz, M.; Grundmann, M.

High quality ZnO single crystals of dimensions 10 x 10 x 0.5 mm3, grown by a hydrothermal approach, have been implanted by 40 keV N+ ions to a fluence of 1 x 1015 cm-2 at room temperature. Their proper-ties revealed by positron annihilation and Hall effect measurements are given in the as-grown and as-irradiated states, and after post-implantation annealing in an oxygen ambient at 200 °C and 500 °C.

Keywords: positron annihilation; zinc oxide; ion implantation; Hall effect; defects; annealing

Physica Status Solidi (C) 4(2007), 3642-3645
Lecture (Conference)
14th International Conference on Positron Annihilation (ICPA-14), 23.-28.07.2006, Hamilton/Ontario, Canada
Lecture (Conference)
The 4th International Wokshop on ZnO and Related Materials, 03.-06.10.2006, Giessen, Deutschland
Lecture (Conference)
19th International Conference on the Application of Accelerators in Research and Industry (CAARI2006), 20.-25.08.2006, Ft. Worth/Texas, USA

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