Formation of buried layers of (SiC)_1-x(AlN)_x in 6H-SiC using ion-beam synthesis

Solid solutions of SiC and III-V compound semiconductors
are recognized as promising materials for novel semiconductor applications.
This paper reports on experiments which explore the possibility of synthesizing
thin buried layers of (SiC)1-x(AlN)x having composition of about x = 0.2
by co-implanting N+ and Al+ ions into 6H-SiC-wafers maintained at temperatures
in the range 200 - 800 C. Structural and compositional evaluation of as-implanted
samples was carried out using a combination of Rutherford backscattering/channelling
spectrometry and infrared reflectance spectroscopy. It is shown that the
structures are highly sensitive to the substrate temperature. The use of
sufficiently high temperatures (400 - 800 C) enables the crystallinity
of the host material as well as relatively low damage levels to be maintained
during implantation. The formation of Al-N bonds within the implanted layers
is also confirmed over the temperature range studied.