GaBi liquid metal alloy ion source for the production of ions of interest in microelectronics research

Focused Ion beam (FIB) systems employing liquid metal ion sources (LMISs) have become of increasing importance in the microelectronics research and industry [1]. Applications of LMISs include IC analysis and modification, maskless ion implantation, secondary ion mass spectroscopy, scanning ion microscopy and ion beam lithography [2-3].
Alloy LMISs are the basis of mass separated FIB systems applying a variety of ion species which can be focused into diameters smaller than 10nm with current densities of several A/cm2 [4].
In this work a Ga38Bi62 alloy liquid metal ion source (Tmelt = 222°C), prepared on a mechanical treated Ta - emitter has been studied, which allows to implant in the case of a silicon substrate shallow donor ions (Bi) as well as acceptors (Ga) in the sub micron range without changing the source. A detailed analysis of the mass spectra as a function of emission current, obtained from this source, shown in Fig. 1, was used to investigate the mechanism for the production of single and double-charged ions. The transition metals in the mass spectra result from the re-sputtered extractor stainless steal material. Moreover, we represent the intensity of cluster ions extracted by the source, as function of emission current. Theoretical modeling support the experimental results.
[1]P.D. Prewett, G.L.R. Mair, Focused Ion Beams from Liquid Metal Ion Sources,
Taunton, Somerset, UK: Research Studies Press, 1991, Chap. 2.
[2]J. Orloff et al, High Resolution Focused Ion Beams – FIB and Its Applications,
Kluwer Academic / Plenum Publishers, 2002, Chap. 6.
[3]L. Bischoff, J. Teichert, S. Hausmann, Th. Ganetsos and GLR. Mair, Microelectronic Engineering, 53 (2000) 613.
[4]L. Bischoff, Ultramicroscopy, 103 (2005) 59.