X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices


X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices

Zeimer, U.; Grenzer, J.; Korn, D.; Döring, S.; Zorn, M.; Pittroff, W.; Pietsch, U.; Saas, F.; Weyers, M.

The local lattice plane curvature of semiconductor disk laser devices were determined by a newly devel-oped X-ray spot mapping technique using white beam synchrotron radiation. This method is suited for in-situ studies of the dependence of both parameters on device temperature and on local heating by optical pumping. The influence of different device mounting procedures on the structural and optical device pa-rameters was investigated as well. This knowledge was used for device optimisation.

Keywords: SCDL laser; white beam synchrotron radiation; wafer mapping

  • Poster
    8th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, 19.-22.09.2006, Baden-Baden/Karlsruhe, Germany
  • Physica Status Solidi (A) 204(2007)8, 2753-2759
    DOI: 10.1002/pssa.200675655
    Cited 1 times in Scopus

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