High dose co-implantation of aluminium and nitrogen in 6H-silicon carbide

High dose co-implantation of aluminium and nitrogen in 6H-silicon carbide

Heera, V.; Pezoldt, J.; Ning, X. J.; Pirouz, P.

• Book (Authorship)
  Institute of Physics Conference Series No 142: Chapter 3, pp. 509-512, Silicon Carbide and Related Materials 1995 Conf., Kyoto, Japan, c 1996 IOP Pub.

Permalink: https://www.hzdr.de/publications/Publ-882