Absence of ferromagnetism in V-implanted ZnO single crystals
Absence of ferromagnetism in V-implanted ZnO single crystals
Zhou, S.; Potzger, K.; Reuther, H.; Skorupa, W.; Helm, M.; Fassbender, J.
The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2×10^16 to 6×10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. The V ions show a thermal mobility as revealed by depth profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction revealed no secondary phase formation which indicates the substitution of V onto Zn site. However in all samples no ferromagnetism was observed down to 5 K by a superconducting quantum interference device magnetometer.
Keywords: ZnO; magnetic semiconductor
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Contribution to proceedings
10th Joint MMM/Intermag Conference, 07.-11.01.2007, Baltimore, Maryland, United States -
Journal of Applied Physics 101(2007), 09H109
DOI: 10.1063/1.2710802
Cited 39 times in Scopus -
Poster
71. Jahrestagung der Deutschen Physikalischen Gesellschaft und DPG Frühjahrstagung des Arbeitskreises Festkörperphysik, 26.-30.03.2007, Regensburg, Germany
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