Intersubband transitions in GaPAlP heterostructures
Intersubband transitions in GaPAlP heterostructures
Semtsiv, M. P.; Müller, U.; Masselink, W. T.; Georgiev, N.; Dekorsy, T.; Helm, M.
Intersubband optical transitions in doped AlPGaP multiple quantum wells are investigated using midinfrared absorption. Strong p-polarized absorption corresponding to the transition from the first to the fourth electronic subband in the Xz valley is measured at wavelengths between 5 and 8 microns. Additional absorption peaks related to transitions between confined donor states are also observed. The measured intersubband transition energies are consistent with an X valley conduction band offset between AlP and GaP of 280 meV and a value of 1.1m0 for the longitudinal effective mass for the X valleys of AlP (where m0 is a free electron mass). These values, the role of donors and confined two-dimensional continuum states, and applications of this system for terahertz intersubband devices are discussed.
Keywords: intersubband; infrared GaP; AlP; quantum well
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Applied Physics Letters 89(2006), 184102
DOI: 10.1063/1.2372709
ISSN: 0003-6951
Cited 15 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-8947