Optical Stimulated Electron Emission from Amorphous Silicon Dioxide Implanted with Iron Ions

The photoelectron emission from SiO2 glasses and films after implantation of Fe+ ions was studied. Emission–active oxygen–vacancy defects like E'centers were detected. A long–range effect, which consisted in formation of point defects on the back side of the samples, was revealed when the samples were exposed to pulsed ion irradiation. Effects of radiation charging of surface layers of the test materials were analyzed.