Efficient oxidation protection of gamma-TiAl alloys by ion implantation of halogens

In this work, gamma-TiAl samples have been rendered highly oxidation-resistant by plasma immersion ion implantation using various Cl- or F-containing precursor gases. PI3 processing has been preceded by beamline ion implantation of either Cl or F because of the well-established nature of the process. Implanting F gives better results. Further work has involved the co-implantation of F and Si to study the combined effect of these elements on the alloy’s high temperature behavior.