Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

This work focuses on the processes of charge trapping in SiO2 layers doped with either rare-earth impurities or Ge. Diode SiO2/Si structures incorporating such oxide layers exhibit efficient electroluminescence (EL) in the spectral range of UV to IR. Analyses of the charge trapping and the variation of the EL intensity during electron injection enable three injection levels to be identified (low, medium and high). The nature of specific hole trapping at the medium injection level is discussed.