Visokotemperaturnaja implantazia ionov N+ i Al+ v 6H-SiC pri visokich dosach
Visokotemperaturnaja implantazia ionov N+ i Al+ v 6H-SiC pri visokich dosach
Yankov, R.; Voelskow, M.; Kreissig, U.; Kulikov, D. V.; Pezoldt, J.; Skorupa, W.; Truschin, Y. V.; Charlamov, V. S.; Zigankov, D. N.
the effect of high temperature high dose nitrogen and aluminium implantation into 6H-SiC is investigated
Keywords: implantation; high dose
- Pisma v Zhurnal Tekhnicheskoi Fiziki 23(1997)16, 6
Permalink: https://www.hzdr.de/publications/Publ-9322
