SiGe heterostructures-on-insulator produced by Ge+-ion implantation and subsequent hydrogen transfer
SiGe heterostructures-on-insulator produced by Ge+-ion implantation and subsequent hydrogen transfer
Tyschenko, I. E.; Cherkov, A. G.; Voelskow, M.; Popov, V. P.
Strong decrease in the carrier mobility of the nanometer-thick silicon films imposes a limitation on the application of silicon-on-insulator (SOI) structures in the current silicon planar CMOS technology. The formation of SiGe-heterostructures-on-insulator (HOI) is a way to increase the carrier mobility in the nanometer-scale layers. In this work, we present the results on the interface mediated endotaxial (IME) growth of thin Ge film from the Ge+-ion implanted SiO2 layer of the SOI structure.
Keywords: SOI; implantation
-
Lecture (Conference)
XII Gadest Conference 2007, 14.-19.10.2007, Erice, Italy - Solid State Phenomena 131-133(2008), 143-147
Permalink: https://www.hzdr.de/publications/Publ-9352