Ion beam synthesis of 4H-(Si1-xC1-y)Gex+y solid solutions
Ion beam synthesis of 4H-(Si1-xC1-y)Gex+y solid solutions
Pezoldt, J.; Kups, T.; Voelskow, M.; Skorupa, W.
4H-(Si1-xC1-y)Gex+y solid solutions with a Ge incorporation on lattice site from 0.7 to 2.5 percent were formed by ion beam synthesis. The concentration was varied from 1 to 20 % by implanting Ge at 600 C. The implanted samples were annealed at 1300 C in a rapid thermal processing equipment.
Keywords: implantation Ge into SiC; RTA; RBS
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Lecture (Conference)
EXMATEC 06, 15.-17.05.2006, Cadiz, Spain
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