Nanoscaled semiconductor heterostructures for CMOS transistors formed by ion implantation and hydrogen transfer

Abstract: Using bulk silicon can be ended for planar 22 nm technological node due to silicon mobility limitation. New type of substrates needs for further scaling in CMOS microelectronics. We speculate that these new type of materials will be semiconductor heterostructure on insulator (HOI) compatible with current silicon planar CMOS technology. In this work an effect of interface mediated endotaxial (IME) growth of thin semiconductor film at Si/SiO2 bonded interface was experimentally observed and investigated for the first time. Joint semiconductor material stack obtained by hydrogen transfer of one layer material (silicon) and second one (germanium or indium antimonide) placed on amorphous silicon dioxide film is presented. First of all thin film dual layer Si-Ge heterostructure properties were considered. Si-Ge HOI structures were obtained using Ge ion implantation in dioxide with followed Ge segregation to the interface between directly bonded silicon and silicon dioxide wafers. The method is also compatible with A3B5 thin film formation, as was shown for InSb film. Thermodynamic, kinetic and lattice mismatch parameter influences on IME process are considered.