Modelling and regrowth mechanism of flashlamp processing of SiC-on-silicon heterostructures
Modelling and regrowth mechanism of flashlamp processing of SiC-on-silicon heterostructures
Smith, M.; Mc Mahon, R.; Voelskow, M.; Skorupa, W.; Stoemenos, J.
This paper describes the development of a thermal model for flashlamp processing of 3C-SiC on silicon. The model is a numerical solution of the enthalpy equation, using a modified Crank-Nichelson scheme to combine accurate prediction of melt depths with resonable computation times.
Keywords: FLASiC; flashlamp annealing; thermal modelling; 3C-SiC
- Material Science Forum 457-460(2004), 333-338
Permalink: https://www.hzdr.de/publications/Publ-9369