Simultaneous formation of two ripple modes on ion sputtered silicon
Simultaneous formation of two ripple modes on ion sputtered silicon
Keller, A.; Roßbach, S.; Facsko, S.; Möller, W.
The amorphized surface of Si(100) sputtered with low energy ions at moderate temperature was found to develop two perpendicular ripple patterns overlaying each other. The evolution of these patterns was studied over a wide range of fluence. Coarsening of both ripple modes was observed, showing a similar time dependence with a coarsening exponent of 1/z ~ 0.08. In the high fluence regime, the surface enters a steady state with both ripple modes still present.
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Nanotechnology 19(2008), 135303
DOI: 10.1088/0957-4484/19/13/135303
Cited 66 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-9377