Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion


Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion

Napolitani, E.; Kuznetsov, A.; Skorupa, W.; Foad, M.

This volume contains the proceedings of Symposium U “Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion” that was held in Nice (France) from the 29th of May to the 2nd of June 2006 during the E-MRS IUMRS ICEM 2006 Spring Meeting. The Symposium was organized by Enrico Napolitani (MATIS – CNR-INFM, Padova, Italy), Andrej Kuznetsov (University of Oslo, Norway), Wolfgang Skorupa (Forschungszentrum Rossendorf, Dresden, Germany), and Majeed Foad (Applied Materials, Sunnyvale CA, USA).
As classical scaling of CMOS devices is slowing down, being progressively replaced by ‘performance engineering’, new approaches are becoming object of more and more intense research, such as strain engineering, new materials, and advanced annealing methods. Topics of the Symposium were new materials such as strained Si, Si1−xGex, concerning issues on defects, diffusion, ion implantation and on their synthesis. But also, and mainly, research on ultra shallow junctions for future Si CMOS devices, spanning from the investigation of new methods for their formation to the fundamental understanding of dopants and defects. 113 contributions were selected from about 30 countries around the world (including Europe, Americas, Africa and Asia). The presentations were organized in 10 oral technical sessions and two poster sessions, including 14 invited speakers, 37 oral presentations and 62 posters.
The organizers of Symposium U would like to thank all participants for their valuable contribution and their active participation, which made the Symposium a very stimulating and lively forum for academic and industrial researchers. Special thanks are due to all the invited speakers for the excellent reviews of their recent work and the state-of-the-art of the actual research activities, and for their brilliant chairing of the sessions. We acknowledge also the significant sponsorship of Applied Materials, which make us capable to provide financial support to some participants and grants to the award winners.

Keywords: Ion implantation; Millisecond annealing; Synthesis; Defects; Diffusion; Doping; Si CMOS devices; Ultra shallow junctions; Boron clustering; Process simulation; Characterization

  • Contribution to proceedings
    ICEM 2006 Spring Meeting - Symposium U, 29.05.-02.06.2006, Nice, France
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 253, Issues 1-2, Amsterdam: Elsevier, 1-282

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