A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high dose N+ and Al+ co-implants in 6H-SiC

Trushin, Yu.; Yankov, R. A.; Kharlamov, V. S.; Kulikov, D. V.; Tsigankov, D. N.; Kreissig, U.; Voelskow, M.; Pezoldt, J.; Skorupa, W.

A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high dose N+ and Al+ co-implants in 6H-SiC

Trushin, Y.; Yankov, R. A.; Kharlamov, V. S.; Kulikov, D. V.; Tsigankov, D. N.; Kreissig, U.; Voelskow, M.; Pezoldt, J.; Skorupa, W.

This work is an attempt to model the fundamental processes that occur when 6H-SiC is implanted at elevated substrate temperatures with high doses of N+ and Al+ ions to synthesise thin buried layers of (SiC)1-x(AlN)x.

Keywords: ion-beam synthesis; computer simulation; defect production; kinetics of defects

Materials Science Forum 264-268(1998), 757-760

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