Ion beam synthesis of 4H-(Si1-xC1-y)Gex+y solid solutions

4H silicon carbide (Si1-xC1-y)Gex+y solid solutions with an average Ge incorporation on lattice sites ranging from 0.7 to 2.5 percent were formed by ion beam synthesis. RBS and RBS/C investigations revealed a decreasing Ge lattice incorporation with increasing implantation dose above 10%. The carried out rapid thermal annealing at 1300 °C reduces the residual damage, increases the lattice site occupation and led to negligible change in the concentration profiles.