Concept of an ion implantation stage with atomistic resolution

We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all chemical elements. The deterministic implantation of single phosphor or nitrogen atoms is interesting for the realization of scalable solid state quantum computers, in particular for silicon and diamond based schemes. A wide range of further applications is expected for the fabrication of nano-electric devices.