Determination of In concentration in InGaAs/GaAs epilayers in the early state of anisotropic stress relaxatio

Determination of In concentration in InGaAs/GaAs epilayers in the early state of anisotropic stress relaxatio

Sass, J.; Mazur, K.; Eichhorn, F.; Strupinski, W.; Turos, A.

• Lecture (Conference)
  Int. Conf. on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials, 13.-17.06.2004, Zakopane, Poland

Permalink: https://www.hzdr.de/publications/Publ-9812