AFM characterization of 6H-SiC surfaces after ion implantation and annealing

AFM characterization of 6H-SiC surfaces after ion implantation and annealing

Brauer, G.; Brandstetter, S.; Teichert, C.; Anwand, W.; Skorupa, W.

6H-SiC surfaces after ion implantation and annealing are characterized by AFM.

Keywords: AFM; SiC surface; ion implantation; annealing

  • Lecture (Conference)
    18th International conference on the application of accelerators in research and industry (CAARI2004), 10.-15.10.2004, Ft. Worth/TX, USA

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