Effects of ion beam induced excess vacancies in silicon: analysis, modelling, application
Effects of ion beam induced excess vacancies in silicon: analysis, modelling, application
Kögler, R.; Eichhorn, F.; Mücklich, A.; Skorupa, W.; Serre, C.; Perez-Rodriguez, A.
Effects of ion beam induced excess vacancies in silicon are discussed.
Keywords: vacancies; silicon; defect engineering
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Lecture (Conference)
5th Int. Conf. on Ion Implantation and other Applications of Ions and Electrons (ION2004), 14.-17.06.2004, Kazimierz Dolny, Poland
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