Epitaxial 3C-SiC formation at the SiO2/Si interface by C+ Implantation into SiO2 and subsequent annealing
Epitaxial 3C-SiC formation at the SiO2/Si interface by C+ Implantation into SiO2 and subsequent annealing
Voelskow, M.; Panknin, D.; Polychroniadis, E. K.; Ferro, G.; Monteil, Y.; Godignion, P.; Mestres, N.; Skorupa, W.; Stoemenos, J.
The epitaxial 3C-SiC formation at the SiO2/Si interface by C+ Implantation into SiO2 and subsequent annealing is studied.
Keywords: SiC formation; carbon implantation; SiO2
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Lecture (Conference)
5th European Conference Silicon Carbide and Related Materials, 31.08.-04.09.2004, Bologna, Italy
Permalink: https://www.hzdr.de/publications/Publ-9930
