Slow positron implantation spectroscopy – a tool to characterize vacancy-type damage in ion-implanted 6H-SiC

Slow positron implantation spectroscopy – a tool to characterize vacancy-type damage in ion-implanted 6H-SiC

Brauer, G.; Anwand, W.; Coleman, P. G.; Skorupa, W.

A lecture is given about slow positron implantation spectroscopy as a tool to characterize vacancy-type damage in ion-implanted 6H-SiC

Keywords: positron beam; SiC; defects

  • Lecture (others)
    Lecture, Department of Physics, University of Texas at Austin, 19.10.2004, Austin/TX, USA
  • Lecture (others)
    Lecture, Physics Department, University of Texas at Arlington, 21.10.2004, Arlington/TX, USA
  • Lecture (others)
    Lecture, Department of Physics, Texas Christian University, 22.10.2004, Ft. Worth/TX, USA

Permalink: https://www.hzdr.de/publications/Publ-9931