Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy
Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy
Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Wu, H. S.; Brauer, G.; Anwand, W.; Skorupa, W.
Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy
Keywords: He-implantion; n-6H-SiC; deep level transient spectroscopy
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Contribution to proceedings
Materials Research Society Spring Meeting 2004, 12.-16.04.2004, San Francisco, USA
Silicon carbide materials, processing, and devices 815 (2004), J5.5, New York: Taylor & Francis
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