Graphite nanostructures in diamond produced by focused ion beam

There is a growing interest in graphite nanostructures since the discovery of exotic quantum properties of and the evidence for a field effect in few-layer-graphene (FLG) [1]. A promising method to produce mechanically stable and electrically isolated graphite nanostuctures is focused ion beam (FIB) implantation into diamond and subsequent annealing [2].
Graphite nanostructures with dimensions down to 100 nm, i.e. wires and electrodes including contact pads, which enable Hall and field effect measurements are produced by 30 keV Ga+ FIB implantation in a (100)- and (111)-oriented diamond surface followed by a subsequent annealing in the temperature range from 600° to 1500°C in vacuum. The structural quality and the electrical properties of the graphite nanostructures are investigated in dependence on the preparation conditions by means of AFM, SEM and electrical measuring techniques.
[1] K. S. Novoselov et al. Science 306, 666 (2004) and Nature 438, 197 (2005)
[2] A. M. Zaitsev and I. A. Dobrinet, phys. stat. sol. (a) 203, R35 (2006)